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Ieee Transactions On Device And Materials Reliability SCIE

國(guó)際簡(jiǎn)稱:IEEE T DEVICE MAT RE  參考譯名:IEEE Transactions on Device and Materials Reliability

主要研究方向:工程技術(shù)-工程:電子與電氣  非預(yù)警期刊  審稿周期: 較慢,6-12周

《IEEE Transactions on Device and Materials Reliability》(Ieee Transactions On Device And Materials Reliability)是一本由Institute of Electrical and Electronics Engineers Inc.出版的以工程技術(shù)-工程:電子與電氣為研究特色的國(guó)際期刊,發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評(píng)論文章和綜述文章,及時(shí)報(bào)道該領(lǐng)域相關(guān)理論、實(shí)踐和應(yīng)用學(xué)科的最新發(fā)現(xiàn),旨在促進(jìn)該學(xué)科領(lǐng)域科學(xué)信息的快速交流。該期刊是一本未開放期刊,近三年沒有被列入預(yù)警名單。

  • 3區(qū) 中科院分區(qū)
  • Q2 JCR分區(qū)
  • 72 年發(fā)文量
  • 2.5 IF影響因子
  • 未開放 是否OA
  • 63 H-index
  • 2001 創(chuàng)刊年份
  • Quarterly 出版周期
  • English 出版語言

The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

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Ieee Transactions On Device And Materials Reliability期刊信息

  • ISSN:1530-4388
  • 出版語言:English
  • 是否OA:未開放
  • E-ISSN:1558-2574
  • 出版地區(qū):UNITED STATES
  • 是否預(yù)警:
  • 出版商:Institute of Electrical and Electronics Engineers Inc.
  • 出版周期:Quarterly
  • 創(chuàng)刊時(shí)間:2001
  • 開源占比:0.057
  • Gold OA文章占比:24.52%
  • OA被引用占比:0
  • 出版國(guó)人文章占比:0.14
  • 出版撤稿占比:0
  • 研究類文章占比:97.22%

Ieee Transactions On Device And Materials Reliability CiteScore評(píng)價(jià)數(shù)據(jù)(2024年最新版)

CiteScore SJR SNIP CiteScore 指數(shù)
4.8 0.436 1.148
學(xué)科類別 分區(qū) 排名 百分位
大類:Engineering 小類:Safety, Risk, Reliability and Quality Q2 65 / 207

68%

大類:Engineering 小類:Electrical and Electronic Engineering Q2 274 / 797

65%

大類:Engineering 小類:Electronic, Optical and Magnetic Materials Q2 103 / 284

63%

名詞解釋:CiteScore 是衡量期刊所發(fā)表文獻(xiàn)的平均受引用次數(shù),是在 Scopus 中衡量期刊影響力的另一個(gè)指標(biāo)。當(dāng)年CiteScore 的計(jì)算依據(jù)是期刊最近4年(含計(jì)算年度)的被引次數(shù)除以該期刊近四年發(fā)表的文獻(xiàn)數(shù)。例如,2022年的 CiteScore 計(jì)算方法為:2022年的 CiteScore =2019-2022年收到的對(duì)2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻(xiàn)數(shù)量 注:文獻(xiàn)類型包括:文章、評(píng)論、會(huì)議論文、書籍章節(jié)和數(shù)據(jù)論文。

Ieee Transactions On Device And Materials Reliability中科院評(píng)價(jià)數(shù)據(jù)

中科院 2023年12月升級(jí)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 3區(qū) ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 3區(qū) 3區(qū)

中科院 2022年12月升級(jí)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 3區(qū) ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 3區(qū) 3區(qū)

中科院 2021年12月舊的升級(jí)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 3區(qū) ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 3區(qū) 3區(qū)

中科院 2021年12月基礎(chǔ)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 4區(qū) ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 4區(qū) 4區(qū)

中科院 2021年12月升級(jí)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 3區(qū) ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 3區(qū) 3區(qū)

中科院 2020年12月舊的升級(jí)版

Top期刊 綜述期刊 大類學(xué)科 小類學(xué)科
工程技術(shù) 3區(qū) PHYSICS, APPLIED 物理:應(yīng)用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 3區(qū) 4區(qū)

Ieee Transactions On Device And Materials Reliability JCR評(píng)價(jià)數(shù)據(jù)(2023-2024年最新版)

按JIF指標(biāo)學(xué)科分區(qū) 收錄子集 分區(qū) 排名 百分位
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 165 / 352

53.3%

學(xué)科:PHYSICS, APPLIED SCIE Q2 87 / 179

51.7%

按JCI指標(biāo)學(xué)科分區(qū) 收錄子集 分區(qū) 排名 百分位
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 186 / 354

47.6%

學(xué)科:PHYSICS, APPLIED SCIE Q3 99 / 179

44.97%

Ieee Transactions On Device And Materials Reliability歷年數(shù)據(jù)統(tǒng)計(jì)

影響因子
中科院分區(qū)

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